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| CM100DU-12F Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 Trench Gate Design Dual IGBTMODTM 100 Amperes/600 Volts N P - NUTS (3 PLACES) TC MEASURING POINT A D Q (2 PLACES) E E2G2 CM C2E1 E2 C1 F G B H G1E1 F M K K J R C L G2 E2 RTC Description: Powerex IGBTMODTM Modules are designed for use in switching applications. Each module consists of two IGBT Transistors in a halfbridge configuration with each transistor having a reverse-connected super-fast recovery free-wheel diode. All components and interconnects are isolated from the heat sinking baseplate, offering simplified system assembly and thermal management. Features: Low Drive Power Low VCE(sat) Discrete Super-Fast Recovery Free-Wheel Diode Isolated Baseplate for Easy Heat Sinking Applications: AC Motor Control UPS Battery Powered Supplies Ordering Information: Example: Select the complete module number you desire from the table - i.e. CM100DU-12F is a 600V (VCES), 100 Ampere Dual IGBTMODTM Power Module. Type CM Current Rating Amperes 100 VCES Volts (x 50) 12 C2E1 E2 C1 RTC E1 G1 Outline Drawing and Circuit Diagram Dimensions A B C D E F G H Inches 3.70 1.890.01 Millimeters 94.0 48.00.25 Dimensions J K L M N P Q R Inches 0.53 0.91 1.13 0.67 0.28 M5 0.26 Dia. 0.16 Millimeters 13.5 23.0 28.7 17.0 7.0 M5 6.5 Dia. 4.0 1.18 +0.04/-0.02 30.0 +1.0/-0.5 3.15 0.43 0.16 0.71 0.02 80.0 11.0 4.0 18.0 0.5 1 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DU-12F Trench Gate Design Dual IGBTMODTM 100 Amperes/600 Volts Absolute Maximum Ratings, Tj = 25 C unless otherwise specified Ratings Junction Temperature Storage Temperature Collector-Emitter Voltage (G-E SHORT) Gate-Emitter Voltage (C-E SHORT) Collector Current (Tc = 25C) Peak Collector Current Emitter Current** (Tc = 25C) Peak Emitter Current** Maximum Collector Dissipation (Tc = 25C, Tj 150C) Mounting Torque, M5 Main Terminal Mounting Torque, M6 Mounting Weight Isolation Voltage (Main Terminal to Baseplate, AC 1 min.) Symbol Tj Tstg VCES VGES IC ICM IE IEM Pc - - - Viso CM100DU-12F -40 to 150 -40 to 125 600 20 100 200* 100 200* 350 31 40 310 2500 Units C C Volts Volts Amperes Amperes Amperes Amperes Watts in-lb in-lb Grams Volts Static Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Collector-Cutoff Current Gate Leakage Current Gate-Emitter Threshold Voltage Collector-Emitter Saturation Voltage Symbol ICES I GES VGE(th) VCE(sat) QG VEC Test Conditions VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V IC = 10mA, VCE = 10V IC = 100A, VGE = 15V, Tj = 25C IC = 100A, VGE = 15V, Tj = 125C Total Gate Charge Emitter-Collector Voltage** VCC = 300V, IC = 100A, VGE = 15V IE = 100A, VGE = 0V Min. - - 5 - - - - Typ. - - 6 1.6 1.6 620 - Max. 1 20 7 2.2 - - 2.6 Units mA A Volts Volts Volts nC Volts * Pulse width and repetition rate should be such that the device junction temperature (Tj) does not exceed Tj(max) rating. ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). 2 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DU-12F Trench Gate Design Dual IGBTMODTM 100 Amperes/600 Volts Dynamic Electrical Characteristics, Tj = 25 C unless otherwise specified Characteristics Input Capacitance Output Capacitance Reverse Transfer Capacitance Inductive Load Switch Times Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Symbol Cies Coes Cres td(on) tr td(off) tf trr Qrr VCC = 300V, IC = 100A, VGE1 = VGE2 = 15V, RG = 6.3 , Inductive Load Switching Operation IE = 100A VCE = 10V, VGE = 0V Test Conditions Min. - - - - - - - - - Typ. - - - - - - - - 1.9 Max. 27 1.8 1 100 80 300 250 150 - Units nf nf nf ns ns ns ns ns C Diode Reverse Recovery Time** Diode Reverse Recovery Charge** Thermal and Mechanical Characteristics, Tj = 25 C unless otherwise specified Characteristics Thermal Resistance, Junction to Case Symbol Rth(j-c)Q Rth(j-c)D Rth(j-c)'Q Rth(c-f) Test Conditions Per IGBT 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per FWDi 1/2 Module, Tc Reference Point per Outline Drawing Thermal Resistance, Junction to Case Per IGBT 1/2 Module, Tc Reference Point Under Chip Contact Thermal Resistance Per Module, Thermal Grease Applied - 0.035 - C/W ** Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi). Min. - Typ. Max. 0.35 Units C/W C/W C/W - - 0.70 - 0.23 3 Powerex, Inc., 200 Hillis Street, Youngwood, Pennsylvania 15697-1800 (724) 925-7272 CM100DU-12F Trench Gate Design Dual IGBTMODTM 100 Amperes/600 Volts OUTPUT CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 200 COLLECTOR CURRENT, IC, (AMPERES) COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) 160 120 VGE = 20V 9 COLLECTOR-EMITTER SATURATION VOLTAGE, VCE(sat), (VOLTS) Tj = 25oC 11 15 10 3 9.5 VGE = 15V Tj = 25C Tj = 125C 5 Tj = 25C 4 3 IC = 200A 2 80 40 8 7.5 8.5 2 1 1 IC = 100A IC = 40A 0 0 1 2 3 4 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) 0 0 40 80 120 160 200 COLLECTOR-CURRENT, IC, (AMPERES) 0 0 6 8 10 12 14 16 18 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) FREE-WHEEL DIODE FORWARD CHARACTERISTICS (TYPICAL) CAPACITANCE VS. VCE (TYPICAL) HALF-BRIDGE SWITCHING CHARACTERISTICS (TYPICAL) 103 Tj = 25C CAPACITANCE, Cies, Coes, Cres, (nF) EMITTER CURRENT, IE, (AMPERES) 102 Cies 103 td(off) SWITCHING TIME, (ns) tf 102 101 102 td(on) 101 100 Coes VGE = 0V Cres 101 tr VCC = 300V VGE = 15V RG = 6.3 Tj = 125C Inductive Load 100 0 1.0 2.0 3.0 4.0 EMITTER-COLLECTOR VOLTAGE, VEC, (VOLTS) 10-1 10-1 100 101 102 100 100 101 102 103 COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS) COLLECTOR CURRENT, IC, (AMPERES) NORMALIZED TRANSIENT THERMAL IMPEDANCE, Zth(j-c) Zth = Rth * (NORMALIZED VALUE) REVERSE RECOVERY CHARACTERISTICS (TYPICAL) REVERSE RECOVERY CURRENT, Irr, (AMPERES) GATE CHARGE, VGE TRANSIENT THERMAL IMPEDANCE CHARACTERISTICS (IGBT & FWDi) 102 REVERSE RECOVERY TIME, trr, (ns) 102 trr Irr 20 GATE-EMITTER VOLTAGE, VGE, (VOLTS) 101 10-3 10-2 10-1 100 101 IC = 100A 16 12 8 4 VCC = 200V VCC = 300V 100 Per Unit Base Rth(j-c) = 0.35C/W (IGBT) Rth(j-c) = 0.7C/W (FWDi) Single Pulse TC = 25C 101 VCC = 300V VGE = 15V RG = 6.3 Tj = 25C Inductive Load 101 10-1 10-1 10-2 10-2 100 100 101 EMITTER CURRENT, IE, (AMPERES) 100 102 0 0 200 400 600 800 1000 GATE CHARGE, QG, (nC) 10-3 10-5 TIME, (s) 10-4 10-3 10-3 4 4 |
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